发明名称 POSITIVE RESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition having satisfactory transmittance at the time of using an exposure light source of &le;160 nm, concretely F<SB>2</SB>excimer laser light (157 nm) and improved in line edge roughness and development defects. <P>SOLUTION: The positive resist composition comprises (A) a compound which generates an acid upon irradiation with an actinic ray or a radiation, (B) an organic fluoropolymer which has at least one repeating structural unit selected from the group of repeating structural units represented by formulae (I)-(II) and a repeating structural unit represented by formula (III) and whose solubility in an alkali developer is increased by the action of an acid and (C) a solvent. In the formula (I), R<SB>11</SB>-R<SB>16</SB>may be the same or different and are each H, F or fluoroalkyl and X<SB>1</SB>is a group which is decomposed by the action of an acid. In the formula (II), R<SB>3</SB>is H or a group which is released by the action of an acid. In the formula (III), R<SB>1</SB>is H, F, Cl, Br, cyano or trifluoromethyl and R<SB>41</SB>-R<SB>46</SB>are each H, F or fluoroalkyl. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003270790(A) 申请公布日期 2003.09.25
申请号 JP20020074306 申请日期 2002.03.18
申请人 FUJI PHOTO FILM CO LTD 发明人 MIZUTANI KAZUYOSHI;KANNA SHINICHI;SASAKI TOMOYA
分类号 G03F7/039;C08F232/00;H01L21/027 主分类号 G03F7/039
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