发明名称 Multi-bank, fault-tolerant, high-performance memory addressing system and method
摘要 A memory addressing system for a multi-bank memory device that generally provides no bank conflicts for stride 1 data access patterns and infrequent bank conflicts for power of 2 stride patterns or other access patterns of interest. In a preferred embodiment, the device comprises an address translation or remapping unit that remaps sequences of logical addresses into sequences of slightly aperiodic physical addresses such that the physical addresses do not form a repetitive pattern of period less than N+1, where N is the number of memory banks, and do not on average repeat a physical bank number within approximately N physical addresses. In large memory modules and embedded logic devices wherein multiple memory units communicate with multiple microprocessors in a single chip, the disclosed remapping combined with disclosed scrambling methods also achieves high tolerance of chip defects which would otherwise render chips unusable, thereby yielding manufacturing economies.
申请公布号 US2003182491(A1) 申请公布日期 2003.09.25
申请号 US20020269890 申请日期 2002.10.14
申请人 CHUDNOVSKY GREGORY V.;CHUDNOVSKY DAVID V. 发明人 CHUDNOVSKY GREGORY V.;CHUDNOVSKY DAVID V.
分类号 G06F12/02;G06F12/06;(IPC1-7):G06F12/10;G06F12/00 主分类号 G06F12/02
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