发明名称 |
Photomask used for fabricating semiconductor device, includes transparent substrate, opaque patterns and phase gratings |
摘要 |
A photomask (50) comprises a transparent substrate; opaque patterns formed on a front surface of the substrate; and phase gratings (150) formed on a back surface of the substrate, allowing off-axis illumination (OAI) of an incident light source beyond an OAI limit of an exposure equipment. A photomask comprises a transparent substrate; opaque patterns formed on a front surface of the substrate, for defining a floodlighting portion for forming patterns; and phase gratings formed on a back surface of the substrate, allowing OAI of an incident light source beyond an OAI limit of exposure equipment, allowing use in an outmost region of an aperture and allowing modified illumination having a shape suitable for a layout of the opaque patterns. An independent claim is also included for a method of fabricating a photomask comprising forming opaque patterns for defining a floodlighting portion for forming patterns, on a front surface of a substrate; and forming phase gratings on a back surface of the substrate. |
申请公布号 |
DE10252051(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
DE2002152051 |
申请日期 |
2002.11.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, IN-KYUN;SOHN, JUNG-MIN;YOON, HEE-SUN;CHOI, SEONG-WOON |
分类号 |
G03F1/26;G03F1/68;G03F1/76;G03F1/78;G03F1/80;G03F7/20;H01L21/027 |
主分类号 |
G03F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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