| 摘要 |
<p>An LSI production line including the processes of forming Cu wiring in the opening of an insulation film by means of a chemical-mechanical polishing method, and then covering the surface of the Cu wiring with a cap insulation film, wherein time required from the Cu wiring formation up to the cap insulation film deposition is set to be within four days. In addition, a semiconductor substrate that has required at least four days from a post-cleaning step up to the cap insulation film deposition process is subjected to a regenerative treatment, thereby minimizing a deterioration in a TDDB life and ensuring the reliability and production yield of an LSI.</p> |
