发明名称 METHOD FOR EVALUATING OCTAHEDRAL VOID OF SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for evaluating an octahedral void of a silicon wafer capable of easily and accurately evaluating a size, a shape, a location and a volume and the like of an octahedral void existing in a mirror-polished silicon wafer. SOLUTION: The method for evaluating an octahedral void of a silicon wafer detected as a light scattering body using a light scattering type surface inspection apparatus sequentially and repeatedly performs steps of a) detecting the light scattering body on the silicon wafer, b) forming an oxide film on the silicon wafer, and c) removing the oxide film on the silicon wafer by an acid etching treatment. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003270169(A) 申请公布日期 2003.09.25
申请号 JP20020241312 申请日期 2002.08.22
申请人 TOSHIBA CERAMICS CO LTD 发明人 SENDA TAKESHI
分类号 G01N21/956;G01N1/32;H01L21/66;(IPC1-7):G01N21/956 主分类号 G01N21/956
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