| 摘要 |
Disclosed is plasma etching method and apparatus for manufacturing a semiconductor device. The plasma etching apparatus includes a chamber in which a wafer to be etched is loaded, at least one CCD, at least one gas supply unit for supplying etching gases into the chamber; and at least one state control unit. The state control unit comprises a light component extractor, a estimator, a comparator, a controller, and a timer. The plasma etching apparatus also comprises a chamber in which a wafer to be etched is loaded; a first dome sealing an upper end of the chamber; a coil winded on the dome and generation electric field into the chamber; at least one light emission tip disposed through a predetermined portion of the dome, so as to emit light toward the wafer and receive light reflected by the wafer; and a plurality of nozzles, each of which is disposed around light emission tip and through the, predetermined portion of the dome, so as to supply gases into the chamber.
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