发明名称 Ion bombardment etch to stripe height
摘要 A method for producing magnetoresistive heads includes the steps of placing a substrate having a plurality of transducers in an environment including a focused ion beam. The focused ion beam is directed onto the first MR element. A property level, generally the resistance associated with the MR stripe, of the first MR element is monitored until the resistance reaches a desired level. The focused ion beam is redirected onto a second area of the substrate which includes the second MR element. The electrical resistance of the second MR element is monitored as the focused ion beam acts on the second MR element until the resistance of the MR element reaches a desired level. Using this process, the resistivity of individual MR elements within the substrate can be tightly controlled.
申请公布号 US2003177631(A1) 申请公布日期 2003.09.25
申请号 US20020104525 申请日期 2002.03.22
申请人 GATES JANE K.;BERKOWITZ JEFFERY K.;STOVER LANCE E. 发明人 GATES JANE K.;BERKOWITZ JEFFERY K.;STOVER LANCE E.
分类号 G11B5/10;G11B5/187;G11B5/31;G11B5/39;H04R31/00;(IPC1-7):G11B5/127;B23K26/14 主分类号 G11B5/10
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