| 摘要 |
<p>A recess (22) is formed in a semiconductor substrate (10) from a first face (20). The recess (22) is provided with an insulation layer (28) on the bottom face and the inner wall face. The insulation wall (28) is provided with a conductive section (30) inside. The second face (38) of the semiconductor substrate (10) is etched with a first etchant having the property that the etching amount of the semiconductor substrate (10) is larger than that of the insulation layer (28), so that the conductive section (30) is protruded in the condition of being coated with the insulation layer (28). A part formed in the bottom of at least the recess (22) of the insulation layer (28) is etched with a second etchant having the property that at least the insulation layer (28) is etched without forming a residual in the conductive section (30), so that the conductive section (30) is exposed.</p> |
