发明名称 ELECTRON BEAM IRRADIATION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve a using efficiency of an electron beam and to reduce a power loss of a device by reducing the quantity of the electron beam lost by being shielded by a mask, regardless of the size of the irradiation width of the electron beam to an irradiating object. <P>SOLUTION: This electron beam irradiation device is equipped with a mask driving device 36 for moving the mask 22 and changing its opening width WM, and a control device 30 having a function for performing following controls based on set values of the irradiation width WI and an irradiation dose D of the electron beam 6 to the irradiation object 26, and an acceleration voltage VA of the electron beam 6: (a) a function for controlling the mask driving device 36 in order to control the opening width WM of the mask to satisfy a relation that WM is approximately equal to WI; (b) a function for controlling a scanning power source 20 in order to control a scanning current IS outputted therefrom to satisfy IS=K<SB>1</SB>&times;VA&times;(WI+&alpha;), wherein K<SB>1</SB>is a constant and &alpha; is the scanning marginal width; and (c) a function for controlling a filament power source 16 in order to control a current IE of the electron beam generated from a filament 4 to satisfy IE=K<SB>2</SB>&times;D&times;WI, wherein K<SB>2</SB>is a constant. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003270390(A) 申请公布日期 2003.09.25
申请号 JP20020069789 申请日期 2002.03.14
申请人 NISSIN HIGH VOLTAGE CO LTD 发明人 YAMADA SHUNICHIRO
分类号 G21K1/04;A61L2/08;G21K5/04 主分类号 G21K1/04
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