COMPOSITION FORMING ANTIREFLECTIVE LIGHT ABSORBING FILM AND METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a composition suitable for producing an antireflection film which is developed simultaneously with a photoresist film in a developing step after exposure in a photolithography process and to provide a method for forming patterns in a semiconductor device using the same.

SOLUTION: The composition forming an antireflective light absorbing film comprises a polymer having a (meth)acrylate repeating unit, a diazoquinone type light absorbing group bonded chemically to the repeating unit, a photoacid generator, a crosslinking agent which crosslinks the polymer under heat and is decrosslinked from the crosslinked polymer by an acid and a catalyst for promoting the crosslinking reaction of the polymer. In the method for forming patterns in a semiconductor device, an antireflection film is formed on a semiconductor substrate using the composition. The antireflection film is exposed together with a photoresist film to be converted to a developable structure and the antireflection film is developed simultaneously with the photoresist film.

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