发明名称 |
Method for defect and conductivity engineering of a conducting nanoscaled structure |
摘要 |
The invention relates to a method for defect and conductivity engineering of an individual part in a conducting nanoscaled structure by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focussed electron beam on this individual part of the structure to be engineered. The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.
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申请公布号 |
US2003178580(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
US20020316722 |
申请日期 |
2002.12.11 |
申请人 |
HARNACK OLIVER;WESSELS JURINA;FORD WILLIAM E.;YASUDA AKIO |
发明人 |
HARNACK OLIVER;WESSELS JURINA;FORD WILLIAM E.;YASUDA AKIO |
分类号 |
G01N23/225;B82B3/00;G01Q60/40;H01B13/00;H01J37/26;H01J37/28;H01J37/30;H01J37/305;(IPC1-7):H01J37/30 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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