发明名称 MAGNETORESISTIVE ELEMENT OF CPP STRUCTURE
摘要 <p>A magnetoresistive film (43) spreads from a medium opposing plane (28) of a head slider toward its rear side. An upper electrode layer (46) is stacked on an upper boundary surface (43b) of the magnetoresistive film. In the upper electrode layer (46), a low resistance region (46a) is formed to spread from the front end exposed to the medium opposing plane (28) along the upper boundary surface (43b) toward the rear side and a high resistance region (46b) having a higher resistivity than the low resistance region is formed to spread from the rear end of the low resistance region (46a) along the upper boundary surface (43b) toward the rear side. In the magnetoresistive film (43), the high resistance region (46b) functions to shift a sense current passage toward the side of the medium opposing plane (28). Sense current flow is concentrated along the medium opposing plane (28). When magnetization rotation is realized with a sufficient rotation amount in the magnetoresistive film (43) in the vicinity of the medium opposing plane (28), a sufficient resistance change can be maintained in the magnetoresistive element of the CPP structure. It is possible to obtain a sufficient sensitivity.</p>
申请公布号 WO2003079331(P1) 申请公布日期 2003.09.25
申请号 JP2002002684 申请日期 2002.03.20
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