发明名称 |
SEGMENTIERTE LEISTUNGSELEKTRODE |
摘要 |
A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier. |
申请公布号 |
DE69629588(D1) |
申请公布日期 |
2003.09.25 |
申请号 |
DE1996629588 |
申请日期 |
1996.06.20 |
申请人 |
LAM RESEARCH CORP., FREMONT |
发明人 |
DIBLE, D.;LENZ, H.;LAMBSON, M. |
分类号 |
H05H1/46;H01J37/32;H01L21/302;H01L21/3065;H01L21/683;(IPC1-7):H01J37/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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