METHOD OF BONDING AND TRANSFERRING A MATERIAL TO FORM A SEMICONDUCTOR DEVICE

摘要

A donor substrate (12) which is patterned to include a donor mesa (18) is bonded to a receiving substrate (20). In a one embodiment, a bulk portion of the donor substrate is removed while leaving a transferred layer (26) bonded to the receiving substrate. The transferred layer is a layer of material transferred from the donor mesa. A portion of receiving substrate can be processed to form a recess (27, 28, or 32) to receive the donor mesa. Alternatively, the transferred layer can be formed over a dummy feature (46) formed on the receiving substrate, either with or without the use of mesas on the donor substrate. In a preferred embodiment, the transferred layer is used to form an optical device such as a photodetector in a semiconductor device. With the invention, bonding can be achieved despite having a non-planar surface on the receiving substrate.