发明名称 Solid state image sensor with signal line potential adjustment circuit and method of driving the same
摘要 A solid state image sensor includes an imaging circuit, a selection circuit, a signal line and an adjustment circuit. The imaging circuit has a plurality of unit cells including a photo-detection section and a first reference potential generating section which generates a first reference potential. The selection circuit selects the unit cell. The signal line is supplied with a signal potential corresponding to a signal charge from the unit cell in a read-out operation, and supplied with the first reference potential in a reset operation. The adjustment circuit operates in response to an adjustment instruction signal which is asserted in an adjustment operation following the reset operation, and applies a second reference potential to the signal line in accordance with a potential of the signal line.
申请公布号 US2003179159(A1) 申请公布日期 2003.09.25
申请号 US20030375196 申请日期 2003.02.28
申请人 OHSAWA SHINJI;EGAWA YOSHITAKA 发明人 OHSAWA SHINJI;EGAWA YOSHITAKA
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374;H04N5/378;(IPC1-7):G09G3/20;H01L29/06;H01L31/032;H01L31/033;H01L31/072;H01L31/109 主分类号 H01L27/146
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