| 摘要 |
<p>A method for growing a SiC crystal on a SiC single crystal substrate having hollow defects called micro-pipes by the CVD method, characterized in that a raw material gas having a C/Si atomic ratio adjusted to a range wherein the rate-determining step for crystal growth is the supply of carbon atoms is contacted with the substrate, to grow epitaxially and laminate a plurality of layers of SiC crystals so that the hollow defect in an SiC crystal is decomposed into dislocations having a small Burger's vector and thus is blockaded and disappears in the crystal surface; a method for preparing a SiC crystal which comprises using the crystal grown in the above as a buffer layer, and laminating thereon another SiC crystal using a raw material gas having a C/Si atomic ratio adjusted to the direction higher than that employed in the formation of the buffer layer, to prepare a crystal having desired film properties; and a SiC crystal prepared by the method.</p> |
