发明名称 LOW STANDBY POWER USING SHADOW STORAGE
摘要 An integrated circuit having CMOS transistors processed with different gate-oxide thicknesses. The transistors having the thinner gate-oxide may be used to generate data values that may be stored by the transistors having the thicker gate-oxides. The thicker gate-oxides may reduce gate leakage currents during a system standby mode.
申请公布号 WO03079368(A1) 申请公布日期 2003.09.25
申请号 WO2003US07642 申请日期 2003.03.11
申请人 INTEL CORPORATION 发明人 CLARK, LAWRENCE;RICCI, FRANCO
分类号 G11C14/00;(IPC1-7):G11C11/412 主分类号 G11C14/00
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