| 摘要 |
PROBLEM TO BE SOLVED: To provide an ECR sputtering system capable of improving a deposition rate and of preventing the contamination of a microwave introducing window by sputter particles. SOLUTION: A target 11 is disposed between a plasma deposition chamber 2 and a substrate S and a front surface 111a of a target member 111 which is a sputtering surface is formed to a conical shape widening toward the substrate S. Argon ions 21 of the plasma extracted from the chamber 2 are pulled into the target member 111 impressed with a negative bias voltage and sputter the front surface 111a. Since the normal front surface 111a heads the diagonal direction of the substrate, the number of the sputter particles released in the substrate direction turns exceedingly greater than the number of the sputter particles deposited toward the plasma deposition chamber. Consequently, the improvement in the deposition rate and the prevention of the contamination of the microwave introducing window are made possible. COPYRIGHT: (C)2003,JPO
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