| 摘要 |
The present invention is related to methods and apparatus to produce a memory cell (400) or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell (400) according to an embodiment of the present invention, silver selenide (406) and a chalcogenide glass (404), such as germanium selenide (GexSe(1-x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes (402,410). Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide (406) and glass layers (404). |
