发明名称 |
Chemically amplified resist and a resist composition |
摘要 |
The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for deep ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.
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申请公布号 |
US2003181629(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
US20030257531 |
申请日期 |
2003.04.16 |
申请人 |
KIM DEOG- BAE;KIM HYEON-JIN;CHOI YONG-JOON;CHUNG YOON-SIK |
发明人 |
KIM DEOG- BAE;KIM HYEON-JIN;CHOI YONG-JOON;CHUNG YOON-SIK |
分类号 |
C08F212/14;G03F7/004;G03F7/039;H01L21/027;(IPC1-7):C08G10/02 |
主分类号 |
C08F212/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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