| 摘要 |
<p>A process for producing a bonding wafer, at least comprising ion implantation step (c), wafer bonding step (d) and detachment heat treatment step (e), wherein the detachment heat treatment is performed under at least one of the conditions consisting of condition such that the temperature is raised at a rate of 5ºC/sec or higher with the use of a rapid heating/rapid cooling unit and condition such that the bonded wafers are arranged sideways. In this process for producing a bonding wafer, the damage and surface roughness after detachment of bonding wafer according to the ion implantation detachment process can be reduced, the subsequent planarization can be facilitated, and the operation for bonding wafer production can be simplified.</p> |
