| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition method for obtaining films of high quality as for various kinds of metals at a low cost and at a high film deposition rate. <P>SOLUTION: Voltage is applied to the space between confronted electrodes under atmospheric pressure or under the pressure close to atmospheric pressure to cause discharge, so that a reactive gas is made into a plasma state, and, by the reactive gas in a plasma state, a film is deposited on the surface of a base material. The reactive gas contains a metallic atom-containing compound. Further, a reducing gas having reducibility is fed into the plasma atmosphere, and, in at least either the time of plasma state or the time after the plasma state, energy promoting the reaction is added, so that the metallic film is deposited on the surface of the base material. The energy is selected from electron beams, radioactive rays, ultraviolet rays and lasers. Further, the reactive gas and reducing gas are almost simultaneously be fed. <P>COPYRIGHT: (C)2003,JPO |
