发明名称 |
Micro-pattern forming method for semiconductor device |
摘要 |
Disclosed is a micro-pattern forming method for a semiconductor device comprising: sequentially forming first and second insulation films on a semiconductor substrate; forming a photosensitive film on the second insulation film; dry etching the second insulation film; removing the photosensitive film; forming a third insulation film on the substrate; forming a fourth insulation film on a resultant structure; etching the third and fourth insulation films using a proper formal solution; etching the third insulation film using the fourth and second insulation films as masks to form a third insulation film pattern; and filling a conductive film into spaces between the second and third insulation films and second flattening the conductive film to form conductive lines.
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申请公布号 |
US2003180669(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
US20030338506 |
申请日期 |
2003.01.08 |
申请人 |
PARK CHEOL SOO |
发明人 |
PARK CHEOL SOO |
分类号 |
H01L21/033;H01L21/3105;H01L21/311;H01L21/768;H01L23/528;(IPC1-7):G03F7/16;G03F7/20;G03F7/40;H01L21/44;H01L21/302;H01L21/461 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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