| 摘要 |
<p>A trench DMOS transistor cell is provided that includes a substrate (104) of a first conductivity type and a body region (116) located on the substrate, which has a second conductivity type. At least one trench (124) extends through the body region and the substrate. An insulating layer (150) lines the trench and a conductive electrode (152) is placed in the trench overlying the insulating layer. A source (140) region of the first conductivity type is located in the body region adjacent to the trench. The trench has sidewalls that define a polygon in the plane of the substrate so that adjacent sidewalls contact one another at an angle greater than 90 degrees.</p> |
