| 摘要 |
<p>This invention provides practical methods to fabricate sub-micron 3D integrated circuits using multiple layers of diodes (Cd12,Cd23,Cd34) manufactured on polycrystalline (401) or amorphous semiconductor films. The long existing problems for using poly diodes for high density IC are solved by design and manufacture methods. The circuit design methods of the present invention improve the tolerance in non-ideal properties of diodes. The resulting IC products can function correctly even when many of their diodes are defective. We also developed manufacture procedures fully compatible with current art IC technologies. No additional masking steps or high temperature procedures are used. The 3D IC devices of the present invention are ready to be manufactured by current art IC technologies. Integrated circuits with unprecedented densities are therefore realized by stacking thin film diodes (D3,D2,D1,D23) upon common active devices.</p> |
