| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC film-formed glassy carbon material which is suitably as a heat resistant member used in a high temperature, high purity atmosphere including members of a semiconductor production system. SOLUTION: The SiC film-formed glassy carbon material is obtained by forming SiC films deposited by a CVD (chemical vapor deposition) method on the surfaces of a glassy carbon base material having a planar or disk shape. In the SiC film-formed surfaces, the value of the ratio between the surface roughnesses RaL and RaS of two surfaces having large areas, RaL/RaS (wherein, RaL≥RaS) is 1.0 to 30, and also, the film thickness of the SiC films is 5 to 30μm. In the SiC film-formed glassy carbon material with SiC films deposited by a CVD method on cylindrical glassy carbon base material surfaces, as for the surface roughnesses of the inner circumferential face and the outer circumferential face, provided that the larger one is defined as RaL, and the smaller one as RaS, the value of the ratio between the surface roughnesses, RaL/RaS is 1.0 to 30, and also, the film thickness of the SiC films is 5 to 30μm. COPYRIGHT: (C)2003,JPO
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