发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR PRODUCT |
摘要 |
The invention relates to a method for integrating field-effect transistors for memory and logic applications in a semiconductor substrate (22). According to said method, the gate dielectric (2) and a semiconductor layer (4) are firstly deposited, on the whole surface thereof, both in the logic and memory areas (6) and (8). The gate electrodes (12) are first of all formed in the memory area (8) from these layers. The source and drain regions (56) are implanted and the memory area (8) is coated with an insulating material (20) in a planarized manner. Only then are the gate electrodes (21) formed in the logic area from the semiconductor layer (4) and the gate dielectric (2). |
申请公布号 |
WO03015161(A3) |
申请公布日期 |
2003.09.25 |
申请号 |
WO2002EP08484 |
申请日期 |
2002.07.30 |
申请人 |
INFINEON TECHNOLOGIES AG;GRAF, WERNER;KIESLICH, ALBRECHT |
发明人 |
GRAF, WERNER;KIESLICH, ALBRECHT |
分类号 |
H01L21/8239;H01L21/8242;H01L27/105 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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