| 摘要 |
A silicon oxide film is formed by thermal oxidation on condition that the thickness thereof on the surface of a diffusion layer is about 3 nm. As a result, the silicon oxide film with a thickness of about 12 nm is formed on the surface of a source diffusion layer due to enhanced oxidation. Subsequently, after a silicon nitride film is formed on the entire surface, the silicon nitride film in a peripheral transistor region is removed. Thereafter, the resist film is removed, and thermal oxidation is performed in order to grow the silicon oxide film formed on the surface of the diffusion layer. On this occasion, the silicon oxide film formed on the surface of each of the source diffusion layer and the drain diffusion layer is covered with the silicon nitride film, and hence it does not grow.
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