发明名称 |
LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A lateral junction field effect transistor includes a first gate electrode layer (18A) arranged in a third semiconductor layer (13) between source/drain region layers (6, 8), having a lower surface extending on the second semiconductor layer (12), and doped with p-type impurities more heavily than the second semiconductor layer (12), and a second gate electrode layer (18B) arranged in a fifth semiconductor layer (15) between the source/drain region layers (6, 8), having a lower surface extending on a fourth semiconductor layer (14), having substantially the same concentration of p-type impurities as the first gate electrode layer (18A), and having the same potential as the first gate electrode layer (18A). Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties
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申请公布号 |
CA2708358(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
CA20022708358 |
申请日期 |
2002.12.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIKAWA, KAZUHIRO;HARADA, SHIN;HIROTSU, KENICHI;HATSUKAWA, SATOSHI;HOSHINO, TAKASHI;MATSUNAMI, HIROYUKI;KIMOTO, TSUNENOBU |
分类号 |
H01L21/337;H01L29/808 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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