| 摘要 |
A mask and method for contact hole exposure. First, a mask including a transparent substrate, a 180° phase shift layer installed on the transparent substrate to define a series of patterns having contact hole transparent areas with 0° phase, and at least one 0° phase opening installed in the phase shift layer between the adjacent contact hole transparent areas is provided. Then, an exposure is performed by transmitting a light source, such as deep ultraviolet (UV), extreme ultraviolet, or X-ray, through the mask, so as to eliminate high degree diffraction waves by the 0° phase opening.
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