| 摘要 |
An endpoint detection system in a CMP apparatus has a polishing platen, a polishing pad covering the polishing platen, a chamber located in the polishing platen, and a gas flow system arranged in a periphery of the chamber. The gas flow system has a gas inlet used to flow dry gas into the chamber and a gas outlet used to evacuate water vapor in the chamber. Since the gas flow system can evacuate the water vapor in the chamber, the problem of contaminants such as water droplets has been solved. The endpoint detection can thus be precisely controlled.
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