Device for depositing thin layers on a substrate used in the production of III-V semiconductors comprises a process chamber arranged in a reactor housing and having a base formed by a susceptor for receiving at least one substrate

摘要

Device for depositing thin layers on a substrate comprises a process chamber (6) arranged in a reactor housing (1) and having a base formed by a susceptor (7) for receiving at least one substrate. A gas inlet element (2) is assigned to the lid of the process chamber. Process gas is fed into the process chamber via its whole gas outlet surface pointing toward the susceptor. The gas outlet surface is formed by a gas-permeable diffuser plate (15). Preferred Features: The diffuser plate extends parallel to a gas outlet plate (13) having a number of sieve-like gas outlet openings (14). The gas outlet plate forms the base of a chamber of the gas inlet element. The diffuser plate consists of a porous metallic or ceramic material or quartz glass, especially a solid open pore foam.