| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance capacitance by maximizing the effective cross-sectional area of the capacitor. CONSTITUTION: The first and second insulating layer(22,23) are sequentially formed on a semiconductor substrate(21). The first polysilicon layer is formed on the second insulating layer. A cell contact hole is formed to expose the substrate of a cell region by selectively etching the first polysilicon layer and the second and first insulating layer. The second polysilicon layer and the third insulating layer are sequentially formed on the resultant structure. The third insulating layer is selectively etched. The third polysilicon layer is formed on the resultant structure and a spacer is formed at both sidewalls of the third polysilicon layer. The third, second and first polysilicon layer are selectively removed by using the spacer as a mask, thereby forming a lower electrode(31).
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