| 摘要 |
PROBLEM TO BE SOLVED: To provide an isostatic pressing method to obtain an inexpensive and fine- shaped pressing, and to provide a heat radiating substrate manufacturing method using the isostatic pressing method. SOLUTION: The heat radiating substrate of the thickness of <0.4 mm which is a Cu-Mo composite substrate formed by diffusion metalization of 30 to 40 mass% copper (Cu) in molten form into a molybdenum compact is provided in a package to mount a semiconductor device. This heat radiating substrate is obtained by obtaining the Mo pressing by the isostatic pressing method, placing Cu on the Mo pressing and heating it, impregnating copper in the Mo pressing to obtain the Cu-Mo composite substrate, and rolling the Cu-Mo composite substrate. In the isostatic pressing method, at least two plates 1, 2, 3, 4, 5 and 6 are arranged in contact with an inner surface surrounded by side walls divided into at least two portions, a composite formed by covering the aggregate with Mo powder filled therein by a flexible cover such as a rubber medium 8 is formed among the plates 1, 2, 3, 4, 5 and 6, and placed in a pressure-resistant water tank. The hydrostatic pressure is applied from the outside of the flexible cover to press and move the plates along the side walls via the cover, thereby to obtaining the Mo pressing. COPYRIGHT: (C)2003,JPO
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