发明名称 Control circuit for a junction field effect transistor
摘要 The field effect transistor (T1) has a connections for a gate (G), drain (D) and source (S), a gate leakage current and a maximum permissible gate current. The circuit has a current source (Q) supplying the gate that produces a control current for switching off the field effect transistor (FET) that is greater than the gate leakage current and smaller than the maximum permissible gate current.
申请公布号 EP1347576(A2) 申请公布日期 2003.09.24
申请号 EP20030005266 申请日期 2003.03.10
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BRAUN, MATTHIAS;WEIS, BENNO
分类号 H03K17/0812;H03K17/082;H03K17/687;(IPC1-7):H03K17/081;H03K19/003;H03K19/00;H03K17/16;H03F1/30 主分类号 H03K17/0812
代理机构 代理人
主权项
地址