发明名称 |
Control circuit for a junction field effect transistor |
摘要 |
The field effect transistor (T1) has a connections for a gate (G), drain (D) and source (S), a gate leakage current and a maximum permissible gate current. The circuit has a current source (Q) supplying the gate that produces a control current for switching off the field effect transistor (FET) that is greater than the gate leakage current and smaller than the maximum permissible gate current.
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申请公布号 |
EP1347576(A2) |
申请公布日期 |
2003.09.24 |
申请号 |
EP20030005266 |
申请日期 |
2003.03.10 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BRAUN, MATTHIAS;WEIS, BENNO |
分类号 |
H03K17/0812;H03K17/082;H03K17/687;(IPC1-7):H03K17/081;H03K19/003;H03K19/00;H03K17/16;H03F1/30 |
主分类号 |
H03K17/0812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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