Device for controlling a high electric field in synthetic insulating material containing at least one rigid electrode

摘要

The central electrode is enclosed within a semiconducting sheath (3) which in turn is located in the insulating material (2). The semiconducting sheath is attached to the electrode by a zone of very strong adherence (5A) and a zone of very weak adherence (5B). After manufacture any void formation takes place at the weak adherence zone but discharge is prevented by the action of the semiconductor