| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is generated by a mixed gas of a second inert gas and one or more gaseous molecules, and a silicon compound layer containing at least a part of the elements constituting the gaseous molecules is formed on the surface of the silicon gas. <IMAGE> |
| 申请公布号 |
EP1347506(A1) |
申请公布日期 |
2003.09.24 |
| 申请号 |
EP20010272543 |
申请日期 |
2001.12.27 |
| 申请人 |
OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;SUGAWA, S.;HIRAYAMA, M.;SHIRAI, Y. |
| 分类号 |
H01L21/28;H01L21/306;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/76;H01L21/8234;H01L21/8239;H01L21/8246;H01L21/8247;H01L27/00;H01L27/088;H01L27/105;H01L27/115;H01L27/12;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/28 |
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