| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which a metal silicide layer on a gate electrode using SiGe is formed in a single phase of a low resistance phase, without the occurrence of coagulation. SOLUTION: A gate electrode 19 of a transistor includes a lower silicon film 14 formed on a gate insulating film 12 of the transistor, SiGe film 16 formed on the lower silicon film 14, upper silicon film 18 formed above the SiGe film 16 and a metal silicide film 30, formed by allowing silicon on the surface side of the upper silicon film 18 and the metal film to react. Before the metal silicide layer 30 is formed, Ge concentration in the surface of the upper silicon film 18 is adjusted, so that the metal silicide layer 30 is composed of a single phase of a low resistance phase and that local exposure of the upper silicon film 18 due to the coagulation of the metal silicide layer 30 will not occur.
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