| 摘要 |
PROBLEM TO BE SOLVED: To reduce hysteresis on a capacitance between electrodes, even when a silicon nitride film is formed on a pair of electrodes as a protective film. SOLUTION: A pair of comb tooth-shaped electrodes 31, 32 are formed on the same plane on a semiconductor substrate 10, and the protective film comprising the silicon nitride film 40 and a moisture sensitive film 50 comprising a polyimide-based polymer are formed to cover the pair of comb tooth-shaped electrodes 31, 32. The interval between the comb tooth-shaped electrodes 31, 32 arranged oppositely is set at least twice of more of the thickness of the silicon nitride film 40. Hereby, transfer of moisture in the moisture sensitive film 50 is facilitated even when the protective film 40 is formed, and hereby the hysteresis on the variation of the capacitance between the pair of comb tooth-shaped electrodes 31, 32 at the rising time and the falling time of humidity can be reduced. COPYRIGHT: (C)2003,JPO
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