| 摘要 |
The method involves oxidizing a (100)-silicon wafer (1), pre-structuring a holding element (4) and a cantilever (18) from the underside of the wafer, structuring the free end of the cantilever, two sides of the sensor tip (21) and the cantilever from the underside and making the cantilever and sensor tip by thinning the residual substrate material from the upper side. |
