Process for producing semiconducting bodies with a layer sequence deposited by MOVPE

摘要

The semiconductor mfg. system has a substrate disc (2) provided with a layer sequence (3) incorporating an active zone (17) via a metal organic gas phase epitaxy method, with electrical contact metallisations (8,9) applied to the rear surface of the substrate disc and to a window layer (4) overlying the layer sequence. The layer sequence is provided with at least one trough (5) with a depth sufficient to divide the active zone, before separation perpendicular to the base of the trough to provide separate semiconductors with curved side flanks.