Method of preparing semiconductor member using an etching solution

摘要

A method for preparing a semiconductor member, which method comprises: providing a first substrate having a porous monocrystalline silicon layer (11) and a non-porous monocrystalline silicon layer (12); bonding the first substrate to a second light-transmissive substrate so that the non-porous monocrystalline silicon layer (12) forms an inner layer of the resulting multi-layer structure; and chemically etching the porous monocrystalline silicon layer using a chemical etching liquid comprising hydrofluoric acid to remove the porous monocrystalline silicon layer from the multilayer structure. The chemical etching liquid is a solution selected from one of the following: a) hydrofluoric acid and hydrogen peroxide; or b) hydrofluoric acid, hydrogen peroxide and an alcohol; or c) buffered hydrofluoric acid and hydrogen peroxide; or d) buffered hydrofluoric acid, hydrogen peroxide and an alcohol.