Wiring-inclusive structure and forming method thereof

摘要

A wiring (4) which is formed by filling a via hole (2) and a wiring trench (3) with Cu via a base film is formed by a damascene method. Thereafter, an SiC:H film (5) is formed to cover an upper surface of the wiring. At this time, an N atom content thereof is controlled to be 8 (atm%) to 20 (atm%) by adding an N-containing gas at the time of forming the SiC:H film, thereby causing the film density of the SiC:H film to be 2.1 (g/cm<3>) or higher.