发明名称 |
METHOD FOR ELIMINATING REACTION BETWEEN PHOTORESIST AND ORGANOSILICATE GLASS |
摘要 |
A method of forming a microelectronic device while preventing photoresist poisoning. Various layers of conductive metals and dielectric materials are deposited onto a substrate in selective sequence to form an integrated circuit. Vias and trenches are formed throughout the structure by exposing and patterning a photoresist material. The dielectric materials of the insulating layers are protected from the photoresist to prevent chemical reactions which lead to photoresist poisoning. This is done by forming a modified surface layer on the dielectric material by either depositing an additional layer that covers the dielectric material, or by modifying the exposed surface of the dielectric material to a plasma or chemical treatment. |
申请公布号 |
EP1346407(A2) |
申请公布日期 |
2003.09.24 |
申请号 |
EP20010992350 |
申请日期 |
2001.12.20 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
DANIELS, BRIAN, J.;KENNEDY, JOSEPH, T.;DUNNE, JUDE, A. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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