发明名称 |
Switching field effect transistor using abrupt metal-insulator transition |
摘要 |
A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
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申请公布号 |
US6624463(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20020188522 |
申请日期 |
2002.07.02 |
申请人 |
KIM HYUN-TAK;KANG KWANG-YONG |
发明人 |
KIM HYUN-TAK;KANG KWANG-YONG |
分类号 |
H01L29/786;H01L29/772;H01L29/78;H01L49/00;(IPC1-7):H01L29/772 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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