Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers

摘要

In a semiconductor laser device including an active region which is made of an aluminum-free material and a plurality of cladding layers made of at least one AlGaAs or AlGaInP material, the active region includes a quantum well layer and at least one optical waveguide layer; a portion of the at least one optical waveguide layer located on one side of the quantum well layer has a thickness of 0.25 mum or more; and the at least one optical waveguide layer, other than a portion of the at least one optical waveguide layer being located near the quantum well layer and having a thickness of at least 10 nm, is doped with impurity of 10<17 >cm<-3 >or more.