Multiple logical bits per memory cell in a memory device

摘要

A read-only memory device is described having non-volatile memory cells that include a memory component connected between electrically conductive traces. A memory component is formed to include a resistor that indicates a resistance value when a potential is applied to a selected memory cell. The resistance value of a memory component in an individual memory cell corresponds to multiple logical bits. The resistance value of a memory component corresponding to a set of logical bits can be based on a thickness and/or an area of electrically resistive material that forms the memory component, and/or based on the geometric shape of the memory component, where different geometric shapes of the electrically resistive material have different resistance values that correspond to different sets of logical bits.