发明名称 |
Synthetic ferrimagnet reference layer for a magnetic storage device |
摘要 |
A synthetic ferrimagnet reference layer for a magnetic storage device. The reference layer has first and second layers of magnetic material operable to be magnetized in first and second magnetic orientations. A spacer layer between the layers of magnetic material is of suitable dimensions to magnetically couple the magnetic layers in opposite directions. The layers of magnetic material have substantially the same coercivities. |
申请公布号 |
US6625059(B1) |
申请公布日期 |
2003.09.23 |
申请号 |
US20020093344 |
申请日期 |
2002.03.06 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SHARMA MANISH;TRAN LUNG THE |
分类号 |
G11C11/15;H01F10/32;(IPC1-7):G11C11/15;G11C11/14 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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