Three-dimensional, mask-programmed read only memory

摘要

A 3-dimensional read only memory includes vertically stacked layers of memory cells. Each of the memory cells includes a mask programmed insulating layer, a pair of diode components, and a pair of crossing-conductors. The conductors (other than those at the top and the bottom of the array) each connect to both overlying conductors via overlying memory cells and to underlying conductors via underlying memory cells.