发明名称 |
Homoepitaxial layers of p-type zinc oxide and the fabrication thereof |
摘要 |
A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitaxy on a crystalline zinc oxide substrate. The zinc oxide layer incorporates a p-type dopant, such as nitrogen, in an atomic concentration adequate to provide p-type conduction. The p-type zinc oxide layer may further incorporate an atomic concentration of a compensating species, such as lithium, sufficient to electronically occupy excess donors therein so that the efficiency of the p-type dopant may be increased.
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申请公布号 |
US6624441(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20020071044 |
申请日期 |
2002.02.07 |
申请人 |
EAGLE-PICHER TECHNOLOGIES, LLC |
发明人 |
CANTWELL HENRY E.;EASON DAVID B. |
分类号 |
C30B23/02;H01L21/363;H01L29/22;H01L29/227;(IPC1-7):H01L29/12;H01L33/00 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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